Two kinds of superstructures of (Ge, Si) wollastonite
نویسندگان
چکیده
منابع مشابه
Magnetoresistance in two-dimensional array of Ge/Si quantum dots
Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization appr...
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Although epitaxial growth has been traditionally monitored by reciprocal space techniques, such as reflection highenergy electron diffraction (RHEED), the development of surface-sensitive imaging techniques, such as scanning tunneling microscopy (STM), allows for monitoring in the real-space. RHEED averages information over relatively large sample regions, and is thus more representative of the...
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In this study, the Co2FeX (X=Ge, Si) Heusler compounds with 30 valence electrons, which are made by using mechanical alloying and arc melting methods were studied. The crystallization of samples was confirmed by XRD data in both manufacturing methods. The results showed that the presence of Si than Ge in the compound played a more effective role to creation a large scale atomic ordering, and th...
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چکیده ندارد.
15 صفحه اولSimulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires
The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on th...
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ژورنال
عنوان ژورنال: Acta Crystallographica Section A Foundations of Crystallography
سال: 2005
ISSN: 0108-7673
DOI: 10.1107/s0108767305083996